APA stil citiranja

Graaff, H. C. d. (1977). NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors (1. izd.). NATO.

Chicago stil citiranja

Graaff, H. C. de. NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors. 1. izd. NATO, 1977.

MLA stil citiranja

Graaff, H. C. de. NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors. 1. izd. NATO, 1977.