NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977.
| Permalink: | http://skupni.nsk.hr/Record/fer.KOHA-OAI-FER:25151/Similar |
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| Glavni autor: | Graaff, H. C. de (-) |
| Vrsta građe: | Knjiga |
| Jezik: | eng |
| Impresum: |
NATO,
1977.
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| Izdanje: | 1. izd |
APA stil citiranja
Graaff, H. C. d. (1977). NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors (1. izd.). NATO.
Chicago stil citiranjaGraaff, H. C. de. NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors. 1. izd. NATO, 1977.
MLA stil citiranjaGraaff, H. C. de. NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors. 1. izd. NATO, 1977.