Electron transport in ultra-thin strained InGaAs MOS devices
This doctoral thesis describes research results in the area of physics-based electron transport modelling and simulations of unstrained and strained InGaAs ultra-thin body (UTB) devices. The objective of this thesis was to obtain the impact of strain and body thickness scaling on electron mobility f...
| Permalink: | http://skupni.nsk.hr/Record/fer.KOHA-OAI-FER:47731/Description |
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| Glavni autor: | Krivec, Sabina (-) |
| Ostali autori: | Suligaj, Tomislav (Thesis advisor) |
| Vrsta građe: | Knjiga |
| Jezik: | hrv eng |
| Impresum: |
Zagreb :
S. Krivec ; Fakultet elektrotehnike i računarstva,
2018.
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