Scharfetter, D. L. (1977). NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : semiconductor physics and characterization of bipolar transistors; bipolar transistor model for IC design; process oriented IC design (1. izd.). NATO.
Chicago stil citiranjaScharfetter, D. L. NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : semiconductor physics and characterization of bipolar transistors; bipolar transistor model for IC design; process oriented IC design. 1. izd. NATO, 1977.
MLA stil citiranjaScharfetter, D. L. NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977: NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : semiconductor physics and characterization of bipolar transistors; bipolar transistor model for IC design; process oriented IC design. 1. izd. NATO, 1977.