Process and device simulation for MOS-VLSI circuits
| Permalink: | http://skupni.nsk.hr/Record/fer.KOHA-OAI-FER:24732/Similar |
|---|---|
| Ostali autori: | Antognetti, Paolo (Editor), Antoniadis, Dimitri A., Oldham, William G. |
| Vrsta građe: | Knjiga |
| Jezik: | eng |
| Impresum: |
Martinus Nijhoff Publishers,
1983.
|
| Izdanje: | 1. izd |
| Nakladnička cjelina: |
NATO ASI Series / Series e: Applied Sciences ;
62 |
APA stil citiranja
Antognetti, P., Antoniadis, D. A., & Oldham, W. G. (1983). Process and device simulation for MOS-VLSI circuits: Process and device simulation for MOS-VLSI circuits (1. izd.). Martinus Nijhoff Publishers.
Chicago stil citiranjaAntognetti, Paolo, Dimitri A. Antoniadis, and William G. Oldham. Process and device simulation for MOS-VLSI circuits: Process and device simulation for MOS-VLSI circuits. 1. izd. Martinus Nijhoff Publishers, 1983.
MLA stil citiranjaAntognetti, Paolo, Dimitri A. Antoniadis, and William G. Oldham. Process and device simulation for MOS-VLSI circuits: Process and device simulation for MOS-VLSI circuits. 1. izd. Martinus Nijhoff Publishers, 1983.