Slični primjerci

• NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : measurements for bipolar devices
  Autor:: Jaspers, P. G. A.
  Impresum: (1977)
• NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : device modeling; modeling of bipolar devices
  Autor:: Engl, W. L., et al.
  Impresum: (1977)
• NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : test structures and diagnostic techniques; physical MOS models; process modeling; modeling of I2L and process selection
  Autor:: Schroen, W. H.
  Impresum: (1977)
• NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : semiconductor physics and characterization of bipolar transistors; bipolar transistor model for IC design; process oriented IC design
  Autor:: Scharfetter, D. L.
  Impresum: (1977)
• NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors
  Autor:: Graaff, H. C. de
  Impresum: (1977)