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00967cam a22002777a 4500 |
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20130713153814.0 |
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111206s2012 caua 000 0 eng d |
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|a 2011944839
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|a 9780615569253
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|a 0615569250
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|a XRL
|c XRL
|d HR-ZaFER
|b hrv
|e ppiak
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|a lccopycat
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|a TK7871.95
|b .G355 2012
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|a GaN transistors for efficient power conversion :
|b the eGaN FET journey continues /
|c Alex Lidow ... [et al.].
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|a El Segundo, CA :
|b Power Conversion Publications,
|c c2012.
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300 |
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|a x, 208 str. :
|b ilustr. ;
|c 23 cm.
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|a Includes bibliographical references and index.
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650 |
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|a Field-effect transistors.
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|a Gallium nitride.
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|a Power electronics.
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|a Lidow, Alex.
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|a 7
|b cbc
|c copycat
|d 2
|e ncip
|f 20
|g y-gencatlg
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|2 udc
|c K
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|b xh58 2012-04-23 z-processor
|i xh58 2012-04-23 ; to Dewey
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|a pc20 2011-12-06
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|c 40917
|d 40917
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