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|z 3303
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|a HR-ZaIRB
|b hrv
|c HR-ZaIRB
|e ppiak
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|a 538.9
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|4 aut
|a International symposium on defects in silicon
|c Seattle)
|d 1999 ;
|n (3 ;
|
245 |
1 |
0 |
|a Defects in silicon /
|c editors T. Abe ... [et al.].
|
260 |
|
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|a Pennington, NJ :
|b The Electrochemical Sciety,
|c 1999.
|
300 |
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|a IX, 530 str. :
|b ilustr. ;
|c 24 cm.
|
490 |
1 |
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|a Proceedings volume ;
|v 99-1
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504 |
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|a Bibliografija.
|
653 |
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|a semiconductors
|a condensed matter
|
830 |
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0 |
|a Proceedings volume ;
|v 99-1
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942 |
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|c BOOK
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960 |
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|a Pivac, Branko
|c Rado
|
998 |
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|c Gračan, Višnja
|
999 |
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|c 2644
|d 2644
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