Defects in silicon

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Ostali autori: International symposium on defects in silicon (Author)
Vrsta građe: Knjiga
Jezik: eng
Impresum: Pennington, NJ : The Electrochemical Sciety, 1999.
Nakladnička cjelina: Proceedings volume ; 99-1
Predmet:
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040 |a HR-ZaIRB  |b hrv  |c HR-ZaIRB  |e ppiak 
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111 2 |4 aut  |a International symposium on defects in silicon  |c Seattle)  |d 1999 ;   |n (3 ;  
245 1 0 |a Defects in silicon /  |c editors T. Abe ... [et al.]. 
260 |a Pennington, NJ :   |b The Electrochemical Sciety,   |c 1999. 
300 |a IX, 530 str. :   |b ilustr. ;   |c 24 cm. 
490 1 |a Proceedings volume ;   |v 99-1 
504 |a Bibliografija. 
653 |a semiconductors  |a condensed matter 
830 0 |a Proceedings volume ;   |v 99-1 
942 |c BOOK 
960 |a Pivac, Branko  |c Rado 
998 |c Gračan, Višnja 
999 |c 2644  |d 2644