Crystallographic phase and orientation analysis of GaAs nanowires by ESEM, EDS, TEM, HRTEM and SAED

The novel properties of semiconductor nanowires are interesting [1] for application and could be useful for application in nanoelectronics and photonics. Depending on the band gap and size of particular semiconductor nanowires, the shift in absorption/emission is observed. The samples were grown by...

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Permalink: http://skupni.nsk.hr/Record/ffzg.KOHA-OAI-FFZG:315832
Matična publikacija: Proceedings of 14th European Microscopy Congress EMC 2008, Volumen 2, Materials Science
Berlin : Springer, 2008
Glavni autori: Tonejc, Anđelka (-), Gradečak, Silvija (Author), Tonejc, Antun Bijelić, Mirjana, Posilović, Hrvoje Bermanec, Vladimir, Tambe, Michael
Vrsta građe: Članak
Jezik: eng