NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977.
| Permalink: | http://skupni.nsk.hr/Record/fer.KOHA-OAI-FER:25151/Details |
|---|---|
| Glavni autor: | Graaff, H. C. de (-) |
| Vrsta građe: | Knjiga |
| Jezik: | eng |
| Impresum: |
NATO,
1977.
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| Izdanje: | 1. izd |
| LEADER | 00736nam a2200181uu 4500 | ||
|---|---|---|---|
| 005 | 20161104101413.0 | ||
| 008 | s1977 a |||||||||| ||eng|d | ||
| 035 | |a HR-ZaFER 29501 | ||
| 040 | |a HR-ZaFER |b hrv |c HR-ZaFER |e ppiak | ||
| 041 | |a eng | ||
| 100 | 1 | |9 27474 |a Graaff, H. C. de | |
| 245 | |a NATO advanced study institute on process and device modeling for integrated circuit design : Univesrite Catholique Louvain, july 19-29, 1977. : |b review of models for bipolar transistors; high current density effects in the collector of bipolar transistors; emitter effects in bipolar transistors / | ||
| 250 | |a 1. izd. | ||
| 260 | |b NATO, |c 1977. | ||
| 300 | |a str.: |b ilustr. ; |c 30 cm. | ||
| 942 | |c K |2 udc | ||
| 990 | |a 27557 | ||
| 999 | |c 25151 |d 25151 | ||